49 citations
- Nanyang Technological UniversitySG7 papers
- Chongqing UniversityCN3 papers
- Shenzhen UniversityCN3 papers
- Xiangtan UniversityCN3 papers
- Xi’an University of Posts and TelecommunicationsCN3 papers
- Fuzhou UniversityCN2 papers
- Shenkar College of Engineering and DesignIL2 papers
- Sichuan UniversityCN2 papers
- Singapore University of Technology and DesignSG2 papers
- Tel Aviv UniversityIL2 papers
- University of WaterlooCA2 papers
- Ariel UniversityIL1 paper
8 papers · 1 filter
Topological Bonding and Electronic properties of CdTe semiconductor material with microporous structure
Yixin Li, Wei Xiong, Lei Li +4
CdTe is II-VI semiconductor material with excellent characteristics and has demonstrated promising potential for application in the photovoltaic field. The electronic properties of…
A possible electronic state quasi-half-valley-metal in monolayer
San-Dong Guo, Yu-Ling Tao, Zhuo-Yan Zhao +3
One of the key problems in valleytronics is to realize valley polarization. Ferrovalley (FV) semiconductor and half-valley-metal (HVM) have been proposed, which possess intrinsic s…
Two-dimensional Janus Si dichalcogenides: A first-principles study
San-Dong Guo, Xu-Kun Feng, Yu-Tong Zhu +2
Strong structural asymmetry is actively explored in two-dimensional (2D) materials, because it can give rise to many interesting physical properties. Motivated by the recent synthe…
Triggering superconductivity, semiconducting states, and ternary valley structure in graphene via functionalization with Si-N layers
Luo Yan, Jiaojiao Zhu, Bao-Tian Wang +4
Opening a band gap and realizing static valley control have been long sought after in graphenebased two-dimensional (2D) materials. Motivated by the recent success in synthesizing…
Atomic bonding and electrical characteristics of two-dimensional graphene/boron nitride van der Waals heterostuctures with manufactured defects via binding energy and bond-charge model
Jiannan Wang, Liangjing Ge, Anlin Deng +4
We used the binding energy-bond-charge model to study the atomic bonding and electrical properties of the two-dimensional graphene/BN van der Waals heterostructure. We manipulated…
Bond relaxation and electronic properties of T type WTe/MoS heterostructure using BOLS BB and BC model
Hongrong Qiu, Hanze Li, Jiannan Wang +2
We combined the bond order length strength and bond charge models and the topological concept to obtain the nonbonding, bonding, and antibonding states of the T type WTe/MoS$_2…