225 citations · 2.3k across the 68 of their papers we have counts for
68 papers
Electric-field-induced fully-compensated ferrimagnetism in experimentally synthesized monolayer MnSe
Liguo Zhang, San-Dong Guo, Gangqiang Zhu
Owing to their inherent characteristics of zero stray field and terahertz dynamics, two-dimensional (2D) zero-net-magnetization magnets demonstrate the potential for miniaturizatio…
Two-dimensional fully-compensated Ferrimagnetism
Yichen Liu, San-Dong Guo, Yongpan Li +1
Antiferromagnetic spintronics has long been a subject of intense research interest, and the recent introduction of altermagnetism has further ignited enthusiasm in the field. Howev…
Electric-filed tuned anomalous valley Hall effect in A-type hexagonal antiferromagnetic monolayer
San-Dong Guo, Yu-Ling Tao, Zi-Yang Zhuo +2
The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propos…
Ultrathick MAN(M'N) Intercalated Monolayers with Sublayer-Protected Fermi Surface Conduction States: Interconnect and Metal Contact Applications
Che Chen Tho, Xukun Feng, Zhuoling Jiang +4
Recent discovery of ultrathick monolayers open up an exciting platform to engineer 2D material properties via intercalation architecture. Here we comput…
How to produce spin-splitting in antiferromagnetic materials
San-Dong Guo, Guang-Zhao Wang, Yee Sin Ang
Antiferromagnetic (AFM) materials have potential advantages for spintronics due to their robustness, ultrafast dynamics, and magnetotransport effects. However, the missing spontane…
Electric-field induced half-metal in monolayer CrSBr
Hao-Tian Guo, San-Dong Guo, Yee Sin Ang
Two-dimensional (2D) half-metallic materials are highly desirable for nanoscale spintronic applications. Here, we propose a new mechanism that can achieve half-metallicity in 2D fe…
Spin-splitting in electric-potential-difference antiferromagnetism
San-Dong Guo
The antiferromagnetic (AFM) materials are robust to external magnetic perturbation due to missing any net magnetic moment. In general, the spin splitting in the band structures dis…
Piezoelectric altermagnetism and spin-valley polarization in Janus monolayer
San-Dong Guo, Xiao-Shu Guo, Kai Cheng +2
The altermagnetism can achieve spin-split bands in collinear symmetry-compensated antiferromagnets. Here, we predict altermagnetic order in Janus monolayer with e…
Intrinsic persistent spin helix in 2D T-XY (XY=P, As, Sb and Bi)
San-Dong Guo, Xu-Kun Feng, Dong Huang +2
The persistent spin helix (PSH) is robust against spin-independent scattering and renders an extremely long spin lifetime, which can improve the performance of potential spintronic…
MAZ Family Heteorstructures: Promises and Prospects
Che Chen Tho, San-Dong Guo, Shi-Jun Liang +5
Recent experimental synthesis of ambient-stable MoSi2N4 monolayer have garnered enormous research interests. The intercalation morphology of MoSi2N4 - composed of a transition meta…
Janus monolayer ScXY (XY=Cl, Br and I) for piezoelectric and valleytronic application: a first-principle prediction
San-Dong Guo, Xiao-Shu Guo, Shuo-Ning Si +3
Coexistence of ferromagnetism, piezoelectricity and valley in two-dimensional (2D) materials is crucial to advance multifunctional electronic technologies. Here, Janus ScXY (X$\neq…
Proposal for valleytronic materials: ferrovalley metal and valley gapless semiconductor
San-Dong Guo, Yu-Ling Tao, Guang-Zhao Wang +2
Valleytronic materials can provide new degrees of freedom to future electronic devices. In this work, the concepts of the ferrovalley metal (FVM) and valley gapless semiconductor (…
A possible electronic state quasi-half-valley-metal in monolayer
San-Dong Guo, Yu-Ling Tao, Zhuo-Yan Zhao +3
One of the key problems in valleytronics is to realize valley polarization. Ferrovalley (FV) semiconductor and half-valley-metal (HVM) have been proposed, which possess intrinsic s…
Two-dimensional Janus Si dichalcogenides: A first-principles study
San-Dong Guo, Xu-Kun Feng, Yu-Tong Zhu +2
Strong structural asymmetry is actively explored in two-dimensional (2D) materials, because it can give rise to many interesting physical properties. Motivated by the recent synthe…
Electric-field induced magnetic-anisotropy transformation to achieve spontaneous valley polarization
San-Dong Guo, Xiao-Shu Guo, Guang-Zhao Wang +2
Valleytronics has been widely investigated for providing new degrees of freedom to future information coding and processing. Here, it is proposed that valley polarization can be ac…
Importance of magnetic shape anisotropy in determining magnetic and electronic properties of monolayer
San-Dong Guo, Yu-Ling Tao, Kai Cheng +2
Two-dimensional (2D) ferromagnets have been a fascinating subject of research, and magnetic anisotropy (MA) is indispensable for stabilizing the 2D magnetic order. Here, we investi…
Out-of-plane high-temperature ferromagnetic monolayer CrSCl with large vertical piezoelectric response
San-Dong Guo, Xiao-Shu Guo, Yu-Tong Zhu +1
For two-dimensional (2D) material, piezoelectric ferromagnetism (PFM) with large out-of-plane piezoresponse is highly desirable for multifunctional ultrathin piezoelectric device a…
Cataloguing MoSiN and WSiN van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications
Che Chen Tho, Chenjiang Yu, Qin Tang +14
Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventiona…
Piezoelectric quantum spin Hall insulator VCClBr monolayer with pure out-of-plane piezoelectric response
San-Dong Guo, Wen-Qi Mu, Hao-Tian Guo +2
The combination of piezoelectricity with nontrivial topological insulating phase in two-dimensional (2D) systems, namely piezoelectric quantum spin Hall insulator (PQSHI), is intri…
Strain effects on topological and valley properties of Janus monolayer
San-Dong Guo, Wen-Qi Mu, Jia-Hao Wang +3
Strain is an effective method to tune the electronic properties of two-dimension (2D) materials, and can induce novel phase transition. Recently, 2D family mater…
Huge out-of-plane piezoelectric response in ferromagnetic monolayer NiClI
San-Dong Guo, Yu-Tong Zhu, Ke Qin +1
The combination of piezoelectricity and ferromagnetic (FM) order in a two-dimensional (2D) material, namely 2D piezoelectric ferromagnetism (PFM), may open up unprecedented opportu…
Piezoelectric ferromagnetism in Janus monolayer YBrI: a first-principle prediction
San-Dong Guo, Meng-Xia Wang, Yu-Ling Tao +1
Coexistence of intrinsic ferromagnetism and piezoelectricity, namely piezoelectric ferromagnetism (PFM), is crucial to advance multifunctional spintronic technologies. In this work…
Correlation-enhanced spin-orbit coupling and quantum anomalous Hall insulator with large band gap and stable ferromagnetism in monolayer
San-Dong Guo, Yu-Tong Zhu, Bang-Gui Liu
Nontrivial band topology combined with magnetic ordering can produce quantum anomalous Hall insulator (QAHI), which may lead to advances in device concepts. Here, through first-pri…
Valley-polarized quantum anomalous Hall insulator in monolayer
San-Dong Guo, Wen-Qi Mu, Bang-Gui Liu
Coexistence of intrinsic ferrovalley (FV) and nontrivial band topology attracts intensive interest both for its fundamental physics and for its potential applications, namely valle…