49 citations · 103 across the 13 of their papers we have counts for
13 papers
Alloyed ReMoS Nanoflakes with Enlarged Interlayer Distances for Hydrogen Evolution
Jing Li, René Hübner, Marielle Deconinck +8
Molybdenum sulfide (MoS) has attracted significant attention due to its great potential as a low-cost and efficient catalyst for the hydrogen evolution reaction. Developing a f…
Ultrathick MAN(M'N) Intercalated Monolayers with Sublayer-Protected Fermi Surface Conduction States: Interconnect and Metal Contact Applications
Che Chen Tho, Xukun Feng, Zhuoling Jiang +4
Recent discovery of ultrathick monolayers open up an exciting platform to engineer 2D material properties via intercalation architecture. Here we comput…
How to produce spin-splitting in antiferromagnetic materials
San-Dong Guo, Guang-Zhao Wang, Yee Sin Ang
Antiferromagnetic (AFM) materials have potential advantages for spintronics due to their robustness, ultrafast dynamics, and magnetotransport effects. However, the missing spontane…
MAZ Family Heteorstructures: Promises and Prospects
Che Chen Tho, San-Dong Guo, Shi-Jun Liang +5
Recent experimental synthesis of ambient-stable MoSi2N4 monolayer have garnered enormous research interests. The intercalation morphology of MoSi2N4 - composed of a transition meta…
2D Janus Niobium Oxydihalide NbO: Multifunctional High-Mobility Piezoelectric Semiconductor for Electronics, Photonics and Sustainable Energy Applications
Tong Su, Ching Hua Lee, San-Dong Guo +5
Two-dimensional (2D) niobium oxydihalide NbOI has been recently demonstrated as an excellent in-plane piezoelectric and nonlinear optical materials. Here we show that Janus nio…
Proposal for valleytronic materials: ferrovalley metal and valley gapless semiconductor
San-Dong Guo, Yu-Ling Tao, Guang-Zhao Wang +2
Valleytronic materials can provide new degrees of freedom to future electronic devices. In this work, the concepts of the ferrovalley metal (FVM) and valley gapless semiconductor (…
A possible electronic state quasi-half-valley-metal in monolayer
San-Dong Guo, Yu-Ling Tao, Zhuo-Yan Zhao +3
One of the key problems in valleytronics is to realize valley polarization. Ferrovalley (FV) semiconductor and half-valley-metal (HVM) have been proposed, which possess intrinsic s…
Switching Rashba spin-splitting by reversing electric-field direction
San-Dong Guo, Jing-Xin Zhu, Hao-Tian Guo +3
The manipulation of the Rashba spin-splitting is crucial for the development of nanospintronic technology. Here, it is proposed that the Rashba spin-splitting can be turned on and…
Two-dimensional Janus Si dichalcogenides: A first-principles study
San-Dong Guo, Xu-Kun Feng, Yu-Tong Zhu +2
Strong structural asymmetry is actively explored in two-dimensional (2D) materials, because it can give rise to many interesting physical properties. Motivated by the recent synthe…
Triggering superconductivity, semiconducting states, and ternary valley structure in graphene via functionalization with Si-N layers
Luo Yan, Jiaojiao Zhu, Bao-Tian Wang +4
Opening a band gap and realizing static valley control have been long sought after in graphenebased two-dimensional (2D) materials. Motivated by the recent success in synthesizing…
Electric-field induced magnetic-anisotropy transformation to achieve spontaneous valley polarization
San-Dong Guo, Xiao-Shu Guo, Guang-Zhao Wang +2
Valleytronics has been widely investigated for providing new degrees of freedom to future information coding and processing. Here, it is proposed that valley polarization can be ac…
Cataloguing MoSiN and WSiN van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications
Che Chen Tho, Chenjiang Yu, Qin Tang +14
Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventiona…
Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSiN and WSiN Monolayers
Qianqian Wang, Liemao Cao, Shi-Jun Liang +8
Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi leve…