34 citations
2 papers
physics.app-ph2021★ 34 cited
OFF-state trapping phenomena in GaN HEMTs: interplay between gate trapping, acceptor ionization and positive charge redistribution
E. Canato, M. Meneghini, C. De Santi +5
We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that…
cs.CE2016★ 5 cited
Electrothermal Simulation of Bonding Wire Degradation under Uncertain Geometries
Thorben Casper, Herbert De Gersem, Renaud Gillon +4
In this paper, electrothermal field phenomena in electronic components are considered. This coupling is tackled by multiphysical field simulations using the Finite Integration Tech…