most citedOFF-state trapping phenomena in GaN HEMTs: interplay between gate trapping, acceptor ionization and positive charge redistribution

34 citations · 34 across the 1 of their papers we have counts for

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physics.app-ph2021★ 34 cited

OFF-state trapping phenomena in GaN HEMTs: interplay between gate trapping, acceptor ionization and positive charge redistribution

E. Canato, M. Meneghini, C. De Santi +5

We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that…