34 citations · 75 across the 7 of their papers we have counts for
7 papers
Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors
D. Favero, C. De Santi, K. Mukherjee +9
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material…
Short Term Reliability and Robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
Zhan Gao, Matteo Meneghini, Kathia Harrouche +9
Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gat…
Degradation mechanism of 0.15 um AlGaN/GaN HEMTs: effects of hot electrons
Z. Gao, F. Rampazzo, M. Meneghini +5
The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and…
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration
Z. Gao, M. Meneghini, F. Rampazzo +4
The reliability of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration was investigated by means of different stress tests. Firstly, DC and p…
OFF-state trapping phenomena in GaN HEMTs: interplay between gate trapping, acceptor ionization and positive charge redistribution
E. Canato, M. Meneghini, C. De Santi +5
We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that…
Exploration of Gate Trench Module for Vertical GaN devices
M. Ruzzarin, K. Geens, M. Borga +9
The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices in terms of cleaning process of the etched surface of the gate trench,…