activity
20202022
most citedOFF-state trapping phenomena in GaN HEMTs: interplay between gate trapping, acceptor ionization and positive charge redistribution

34 citations · 115 across the 9 of their papers we have counts for

collaborators
Showing 2022Show all

2 papers · 1 filter

physics.app-ph2022★ 5 cited

Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors

D. Favero, C. De Santi, K. Mukherjee +9

For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material…

physics.app-ph2022★ 10 cited

Study and characterization of GaN MOS capacitors: planar versus trench topographies

K. Mukherjee, C. De Santi, S. You +9

Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of…