350 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Istituto NanoscienzeIT15 papers
- Scuola Normale SuperioreIT14 papers
- National Enterprise for NanoScience and NanoTechnologyIT10 papers
- University of FlorenceIT10 papers
- University of PisaIT7 papers
- National Interuniversity Consortium of Materials Science and TechnologyIT5 papers
- Institute for Complex SystemsIT4 papers
- National Research CouncilLK4 papers
- Center for Nanotechnology InnovationIT3 papers
- Italian Institute of TechnologyIT3 papers
- McGill UniversityCA3 papers
- European Synchrotron Radiation FacilityFR2 papers
5 papers · 2 filters
STM Study of Exfoliated Few Layer Black Phosphorus Annealed in Ultrahigh Vacuum
Abhishek Kumar, F. Telesio, S. Forti +7
Black Phosphorus (bP) has emerged as an interesting addition to the category of two-dimensional materials. Surface-science studies on this material are of great interest, but they…
Non-Classical Longitudinal Magneto-Resistance in Anisotropic Black Phosphorus
Francesca Telesio, Nicholas Hemsworth, William Dickerson +11
Resistivity measurements of a few-layer black phosphorus (bP) crystal in parallel magnetic fields up to 45 T are reported as a function of the angle between the in-plane field and…
Polymer-based black phosphorus (bP) hybrid materials by in situ radical polymerization: an effective tool to exfoliate bP and stabilize bP nanoflakes
Elisa Passaglia, Francesca Cicogna, Federica Costantino +10
Black phosphorus (bP) has been recently investigated for next generation nanoelectronic multifunctional devices. However, the intrinsic instability of exfoliated bP (the bP nanofla…
Phosphorus oxide gate dielectric for black phosphorus field effect transistors
W. Dickerson, V. Tayari, I. Fakih +7
The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive io…
Transistor concepts based on lateral heterostructures of metallic and semiconducting phases of MoS
Damiano Marian, Elias Dib, Teresa Cusati +4
In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phase…