588 citations
- Hitachi Global Storage Technologies (United States)US15 papers
- SLAC National Accelerator LaboratoryUS7 papers
- Lawrence Berkeley National LaboratoryUS6 papers
- Stanford UniversityUS6 papers
- University of California, IrvineUS5 papers
- Centre National de la Recherche ScientifiqueFR4 papers
- University of California San DiegoUS4 papers
- Uppsala UniversitySE4 papers
- Western Digital (Japan)JP4 papers
- CEA GrenobleFR3 papers
- Chemnitz University of TechnologyDE3 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR3 papers
10 papers · 1 filter
Precise nanoscale temperature mapping in operational microelectronic devices by use of a phase change material
Qilong Cheng, Sukumar Rajauria, Erhard Schreck +5
The microelectronics industry is pushing the fundamental limit on the physical size of individual elements to produce faster and more powerful integrated chips. These chips have na…
Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices
Kiumars Aryana, John T. Gaskins, Joyeeta Nag +10
Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards…
Unveiling temperature dependence mechanisms of perpendicular magnetic anisotropy at Fe/MgO interfaces
Fatima Ibrahim, Ali Hallal, Alan Kalitsov +3
The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-tr…
On the Efficient Estimation of Min-Entropy
Yongjune Kim, Cyril Guyot, Young-Sik Kim
The min-entropy is a widely used metric to quantify the randomness of generated random numbers in cryptographic applications; it measures the difficulty of guessing the most likely…
Ultrathin perpendicular free layers for lowering the switching current in STT-MRAM
Tiffany S. Santos, Goran Mihajlovic, Neil Smith +4
The critical current density required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is pro…
Thermal stability for domain wall mediated magnetization reversal in perpendicular STT MRAM cells with W insertion layers
G. Mihajlovic, N. Smith, T. Santos +3
We present an analytical model for calculating energy barrier for the magnetic field-driven domain wall-mediated magnetization reversal of a magneto-resistive random access memory…