22 citations · 84 across the 7 of their papers we have counts for
7 papers
Ultrathin perpendicular free layers for lowering the switching current in STT-MRAM
Tiffany S. Santos, Goran Mihajlovic, Neil Smith +4
The critical current density required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is pro…
Thermal stability for domain wall mediated magnetization reversal in perpendicular STT MRAM cells with W insertion layers
G. Mihajlovic, N. Smith, T. Santos +3
We present an analytical model for calculating energy barrier for the magnetic field-driven domain wall-mediated magnetization reversal of a magneto-resistive random access memory…
Origin of the resistance-area product dependence of spin transfer torque switching in perpendicular magnetic random access memory cells
Goran Mihajlovic, Neil Smith, Tiffany Santos +5
We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our result…
Template-Assisted Direct Growth of 1Td/in Bit Patterned Media
En Yang, Zuwei Liu, Hitesh Arora +8
We present a method for growing bit patterned magnetic recording media using directed growth of sputtered granular perpendicular magnetic recording media. The grain nucleation is t…
Electrical Switching Dynamics in Circular and Rectangular Ge2Sb2Te5 Nanopillar Phase Change Memory Devices
Ozhan Ozatay, Barry Stipe, Jordan Katine +1
We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance ma…
Scaling Properties of Critical Phase Change Conditions in Ge2Sb2Te5 Nanopillars
O. Ozatay, B. Stipe, J. A. Katine +1
We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance ma…