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20082020
most citedUltrathin perpendicular free layers for lowering the switching current in STT-MRAM

22 citations · 84 across the 7 of their papers we have counts for

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cond-mat.mes-hall2019

Origin of the resistance-area product dependence of spin transfer torque switching in perpendicular magnetic random access memory cells

Goran Mihajlovic, Neil Smith, Tiffany Santos +5

We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our result…