588 citations
- Hitachi Global Storage Technologies (United States)US15 papers
- SLAC National Accelerator LaboratoryUS7 papers
- Lawrence Berkeley National LaboratoryUS6 papers
- Stanford UniversityUS6 papers
- University of California, IrvineUS5 papers
- Centre National de la Recherche ScientifiqueFR4 papers
- University of California San DiegoUS4 papers
- Uppsala UniversitySE4 papers
- Western Digital (Japan)JP4 papers
- CEA GrenobleFR3 papers
- Chemnitz University of TechnologyDE3 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR3 papers
5 papers · 1 filter
Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions
Jonathan M. Goodwill, Nitin Prasad, Brian D. Hoskins +9
The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Av…
Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance
T. Hennen, E. Wichmann, R. Waser +2
Resistive switching devices and other components with negative differential resistance (NDR) are emerging as possible electronic constituents of next-generation computing architect…
State-resolved ultrafast charge and spin dynamics in [Co/Pd] multilayers
Loïc Le Guyader, Daniel J. Higley, Matteo Pancaldi +17
We use transient absorption spectroscopy with circularly polarized x-rays to detect laser-excited hole states below the Fermi level and compare their dynamics with that of unoccupi…
Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics
D. Babich, J. Tranchant, C. Adda +13
Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic cir…
Current-limiting amplifier for high speed measurement of resistive switching data
T. Hennen, E. Wichmann, A. Elias +5
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide…