912 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Nanjing UniversityCN78 papers
- Centre National de la Recherche ScientifiqueFR49 papers
- Pennsylvania State UniversityUS48 papers
- Xi'an Jiaotong UniversityCN43 papers
- Center for Astrophysics Harvard & SmithsonianUS41 papers
- National Laboratory of Solid State Microstructures39 papers
- Argonne National LaboratoryUS38 papers
- Goddard Space Flight CenterUS38 papers
- Johns Hopkins UniversityUS31 papers
- Collaborative Innovation Center of Advanced MicrostructuresCN29 papers
- Université Paris-SaclayFR28 papers
- Tel Aviv UniversityIL26 papers
22 papers · 2 filters
Probing InAs quantum dot states with surface plasmon polaritons
Fernando W. de Alencar Sobreira, Yuriy I. Mazur, Xian Hu +2
When placed near a thin metallic film, excitons in a quantum dot (QD) decay into surface plasmon polaritons (SPPs), guided modes of light confined at the interface of the metal/die…
Two-dimensional disorder in black phosphorus and monochalcogenide monolayers
Mehrshad Mehboudi, Alex M. Dorio, Wenjuan Zhu +6
Ridged, orthorhombic two-dimensional atomic crystals with a bulk {\em Pnma} structure such as black phosphorus and monochalcogenide monolayers are an exciting and novel material pl…
Strain and the optoelectronic properties of non-planar phosphorene monolayers
Mehrshad Mehboudi, Kainen Utt, Humberto Terrones +3
Lattice {\em Kirigami}, ultra-light metamaterials, poly-disperse aggregates, ceramic nano-lattices, and two-dimensional (2-D) atomic materials share an inherent structural discrete…
Strain-tunable topological quantum phase transition in buckled honeycomb lattices
Jia-An Yan, Mack A. Dela Cruz, Salvador Barraza-Lopez +1
Low-buckled silicene is a prototypical quantum spin Hall insulator with the topological quantum phase transition controlled by an out-of-plane electric field. We show that this fie…
Time-evolution of the GaAs(0 0 1) pre-roughening process
Z. Ding, D. W. Bullock, P. M. Thibado +2
The GaAs(0 0 1) surface is observed to evolve from being perfectly flat to a surface half covered with one-monolayer high spontaneously formed GaAs islands. The dynamics of this pr…
Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)
Z. Ding, P. M. Thibado, C. Awo-Affouda +1
We have deposited Co films on the GaAs(001) surface by using an e-beam evaporation method. The thicknesses of the Co films are measured by using x-ray reflectivity and Rutherford b…
Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy
J. F. Xu, S. W. Liu, M. Xiao +1
GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) mea…
Atmospheric oxygen in Mn doped GaAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy
J. F. Xu, P. M. Thibado, C. Awo-Affouda +2
Mn doped GaAs thin films were grown using molecular beam epitaxy at high and low substrate temperatures. The elemental concentration depth profiles in the thin films were determine…
Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy
J. F. Xu, P. M. Thibado, C. Awo-Affouda +2
Mn concentration depth profiles in Mn-doped GaAs thin films grown at substrate temperatures of 580 and 250 °C using various Mn cell temperatures have been investigated with dynamic…
Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy
J. F. Xu, S. W. Liu, M. Xiao +1
GaMnAs thin films with different Mn doping concentrations were grown via molecular beam epitaxy using a substrate temperature of 250 °C. The thin films were investigated using phot…
Streamlined Inexpensive Integration of a Growth Facility and Scanning Tunneling Microscope for in situ Characterization
P. Xu, D. Qi, S. D. Barber +3
The integration of a scanning tunneling microscope chamber with a sample growth facility using non-custom, commercially available parts is described. The facility also features a n…
Controlling Mn Depth Profiles in GaMnAs During High-Temperature Molecular Beam Epitaxial Growth
P. Xu, D. Qi, M. L. Ackerman +2
Mn-doped GaAs thin films were grown at a high substrate temperature of 580 C. During the growth process, the Mn cell temperature was ramped at different rates, resulting in a varie…
Giant Surface Charge Density of Graphene Resolved From Scanning Tunneling Microscopy and First-Principles Theory
P. Xu, Y. Yang, S. D. Barber +6
In this work, systematic constant-bias, variable-current scanning tunneling microscopy (STM) measurements and STM simulations from density-functional theory are made, yielding crit…
Atomic Control of Strain in Freestanding Graphene
P. Xu, Y. Yang, S. D. Barber +8
In this study, we describe a new experimental approach based on constant-current scanning tunneling spectroscopy to controllably and reversibly pull freestanding graphene membranes…
Electromechanical properties of freestanding graphene functionalized with tin oxide (SnO2) nanoparticles
L. Dong, J. Hansen, P. Xu +5
Freestanding graphene membranes were functionalized with SnO2 nanoparticles. A detailed procedure providing uniform coverage and chemical synthesis is presented. Elemental composit…
Electronic transition from graphite to graphene via controlled movement of the top layer with scanning tunneling microscopy
P. Xu, Y. Yang, D. Qi +5
A series of measurements using a technique called electrostatic-manipulation scanning tunneling microscopy (EM-STM) were performed on a highly-oriented pyrolytic graphite surface.…
New Scanning Tunneling Microscopy Technique Enables Systematic Study of the Unique Electronic Transition from Graphite to Graphene
P. Xu, Y. Yang, S. D. Barber +5
A series of measurements using a novel technique called electrostatic-manipulation scanning tunneling microscopy were performed on a highly-oriented pyrolytic graphite (HOPG) surfa…
Broad frequency and amplitude control of vibration in freestanding graphene via scanning tunneling microscopy with calculated dynamic pseudo-magnetic fields
P. Xu, J. K. Schoelz, S. D. Barber +2
A technique to locally generate mechanical vibrations in freestanding graphene using scanning tunneling microscopy (STM) is presented. The frequency of the mechanical vibrations is…
Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy
P. Xu, M. L. Ackerman, S. D. Barber +8
Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller tha…
Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface
P. Xu, M. L. Ackerman, S. D. Barber +7
Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar…
Quantum Anomalous Hall Effect in Graphene Proximity Coupled to an Antiferromagnetic Insulator
Zhenhua Qiao, Wei Ren, Hua Chen +4
We propose realizing the quantum anomalous Hall effect by proximity coupling graphene to an antiferromagnetic insulator that provides both broken time-reversal symmetry and spin-or…
Graphene Ripples as a Realization of a Two-Dimensional Ising Model: A Scanning Tunneling Microscope Study
J. K. Schoelz, P. Xu, V. Meunier +4
Ripples in pristine freestanding graphene naturally orient themselves in an array that is alternately curved-up and curved-down; maintaining an average height of zero. Using scanni…