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cond-mat.mtrl-sci2017★ 12 cited
Signature of growth-deposition technique on the properties of PECVD and thermal SiO2
Subimal Majee, Devesh Barshilia, Sanjeev Kumar +2
In this article, we report the process induced variation in the characteristics of PECVD deposited and thermally grown silicon dioxide (SiO2) thin film. We find key differences in…
cond-mat.mtrl-sci2015
Impact of post deposition annealing in O2 ambient on structural properties of nanocrystalline hafnium oxide thin film
Shilpi Pandey, Prateek Kothari, Sunil Kumar Sharma +2
In the present work, HfO2 thin film (100nm) has been deposited by sputtering technique and annealed at various temperatures ranging from 400 to 1000\degree (in step of 200 \degree)…