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- Max Planck SocietyDE157 papers
- Institute of PhysicsPL70 papers
- Centre National de la Recherche ScientifiqueFR59 papers
- Leibniz Institute for Solid State and Materials ResearchDE46 papers
- École Polytechnique Fédérale de LausanneCH44 papers
- University of British ColumbiaCA41 papers
- University of StuttgartDE41 papers
- Helmholtz-Zentrum Berlin für Materialien und EnergieDE37 papers
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- Paul Scherrer InstituteCH34 papers
- The University of TokyoJP34 papers
- Institut Laue-LangevinFR29 papers
9 papers · 2 filters
Josephson Effect and Charge Distribution in Thin BiTe Topological Insulators
Martin P. Stehno, Prosper Ngabonziza, Hiroaki Myoren +1
Thin layers of topological insulator materials are quasi-two-dimensional systems featuring a complex interplay between quantum confinement and topological band structure. To unders…
Deterministic direct growth of WS2 on CVD graphene arrays
Giulia Piccinini, Stiven Forti, Leonardo Martini +5
The combination of the exciting properties of graphene with those of monolayer tungsten disulfide (WS2) makes this heterostack of great interest for electronic, optoelectronic and…
Magneto-optic and transverse transport properties of non-collinear antiferromagnets
Sebastian Wimmer, Sergiy Mankovsky, Ján Minár +2
Previous studies on the anomalous Hall effect in coplanar non-collinear antiferromagnets are revisited and extended to magneto-optic properties, namely magneto-optic Kerr effect (M…
Control of dopant crystallinity in electrochemically treated cuprate thin films
Alex Frano, Martin Bluschke, Zhijun Xu +16
We present a methodology based on \textit{ex-situ} (post-growth) electrochemistry to control the oxygen concentration in thin films of the superconducting oxide LaCuO g…
Spin-split band hybridization in graphene proximitized with -RuCl nanosheets
Soudabeh Mashhadi, Youngwook Kim, Jeongwoo Kim +8
Proximity effects induced in the 2D Dirac material graphene potentially open access to novel and intriguing physical phenomena. Thus far, the coupling between graphene and ferromag…
High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO/SrZrO heterostructures
Arnaud P. Nono Tchiomo, Wolfgang Braun, Bryan P. Doyle +4
By inserting a SrZrO buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement…