Cornell University

output

20022025

most citedAdvanced capabilities for materials modelling with Quantum ESPRESSO

7.7k citations

Showing 2023 · cond-mat.mtrl-sciShow all

5 papers · 2 filters

cond-mat.mtrl-sci2023

Silicon Implantation and Annealing in $β$ -Ga $_{2}$ O $_{3}$ : Role of Ambient, Temperature, and Time

K. R. Gann, N. Pieczulewski1, C. A. Gorsak +9

Optimizing thermal anneals of Si-implanted $β$ -Ga $_{2}$ O $_{3}$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature…

cond-mat.mtrl-sci2023★ 12 cited

Topotactically induced oxygen vacancy order in nickelate single crystals

Yu-Mi Wu, Pascal Puphal, Hangoo Lee +6

The strong structure-property coupling in rare-earth nickelates has spurred the realization of new quantum phases in rapid succession. Recently, topotactic transformations have pro…

cond-mat.mtrl-sci2023★ 31 cited

Limits to the strain engineering of layered square-planar nickelate thin films

Dan Ferenc Segedin, Berit H. Goodge, Grace A. Pan +15

The layered square-planar nickelates, Nd $_{n + 1}$ Ni $_{n}$ O $_{2 n + 2}$ , are an appealing system to tune the electronic properties of square-planar nickelates via dimensionality; indeed…

cond-mat.mtrl-sci2023★ 7 cited

Employing High-temperature-grown SrZrO $_{3}$ Buffer to Enhance the Electron Mobility in La:BaSnO $_{3}$ -based Heterostructures

Prosper Ngabonziza, Jisung Park, Wilfried Sigle +3

We report a synthetic route to achieve high electron mobility at room temperature in epitaxial La:BaSnO $_{3}$ /SrZrO $_{3}$ heterostructures prepared on several oxide substrates. Room-te…

cond-mat.mtrl-sci2023★ 15 cited

Growth of $α - G a_{2} O_{3}$ on $A l_{2} O_{3}$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

J. P. McCandless, D. Rowe, N. Pieczulewski +8

We report the growth of $α - G a_{2} O_{3}$ on $m$ -plane $A l_{2} O_{3}$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We…

Silicon Implantation and Annealing in β-Ga2​O3​: Role of Ambient, Temperature, and Time

Topotactically induced oxygen vacancy order in nickelate single crystals

Limits to the strain engineering of layered square-planar nickelate thin films

Employing High-temperature-grown SrZrO3​ Buffer to Enhance the Electron Mobility in La:BaSnO3​-based Heterostructures

Growth of α−Ga2​O3​ on Al2​O3​ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

Silicon Implantation and Annealing in $β$ -Ga $_{2}$ O $_{3}$ : Role of Ambient, Temperature, and Time

Employing High-temperature-grown SrZrO $_{3}$ Buffer to Enhance the Electron Mobility in La:BaSnO $_{3}$ -based Heterostructures

Growth of $α - G a_{2} O_{3}$ on $A l_{2} O_{3}$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy