310 citations
- Centre National de la Recherche ScientifiqueFR39 papers
- ETH ZurichCH8 papers
- Université de LilleFR7 papers
- Université Joseph FourierFR7 papers
- Institut NéelFR5 papers
- UCLouvainBE5 papers
- École Centrale de LilleFR4 papers
- Institut polytechnique de GrenobleFR4 papers
- Institut Supérieur de l'Électronique et du NumériqueFR4 papers
- CEA GrenobleFR3 papers
- Centre de Radiofréquences, Optique et Micro-nanoélectronique des AlpesFR3 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR3 papers
10 papers · 1 filter
Imaging Coulomb Islands in a Quantum Hall Interferometer
B. Hackens, F. Martins, S. Faniel +7
In the Quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially-separated edge states. However, in mesoscopic systems, electronic t…
One-by-one trap activation in silicon nanowire transistors
N. Clement, K. Nishiguchi, A. Fujiwara +1
Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an e…
A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity
N. Clement, K. Nishiguchi, J. F. Dufreche +3
We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-nois…
On giant piezoresistance effects in silicon nanowires and microwires
J. S. Milne, S. Arscott, C. Renner +1
The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of surface depleted silicon nano- and micro-structures. Th…
Imaging charge and spin diffusion of minority carriers in GaAs
I. Favorskiy, D. Vu, E. Peytavit +3
Room temperature electronic diffusion is studied in 3 mum thick epitaxial p+ GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equi…
Charged impurity scattering and mobility in gated silicon nanowires
Martin P. Persson, Hector Mera, Yann-Michel Niquet +2
We study the effects of charged impurity scattering on the electronic transport properties of <110>-oriented Si nanowires in a gate-all-around geometry, where the impurity potentia…