On giant piezoresistance effects in silicon nanowires and microwires

Abstract

The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of surface depleted silicon nano- and micro-structures. The resistance is shown to vary strongly with time due to electron and hole trapping at the sample surfaces. Importantly, this time varying resistance manifests itself as an apparent giant PZR identical to that reported elsewhere. By modulating the applied stress in time, the true PZR of the structures is found to be comparable with that of bulk silicon.

References in corpus (1)

• In-plane nanoelectromechanical resonators based on silicon nanowire piezoresistive detection

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• Giant, anomalous piezo-impedance of silicon-on-insulator
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