137 citations · 411 across the 23 of their papers we have counts for
23 papers
Efficient valley polarization of charged excitons and resident carriers in MoS2 monolayers by optical pumping
Sangjun Park, Steve Arscott, Takashi Taniguchi +3
We investigate with polarized microphotoluminescence the optical pumping of the valley degree of freedom in charge-tunable MoS2 monolayers encapsulated with hexagonal boron nitride…
Piezoresistance in defect-engineered silicon
H. Li, A. Thayil, C. T. K. Lew +5
The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a functio…
Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface
H. Li, L. Martinelli, F. Cadiz +4
A combination of micro-Raman spectroscopy and micro-XPS (X-ray photo-electron spectroscopy) mapping on statically deflected p-type silicon cantilevers is used to study the mechanic…
Giant, anomalous piezo-impedance of silicon-on-insulator
Heng Li, Christopher Tao-Kuan Lew, Brett Johnson +3
A giant, anomalous piezo-response of fully-depleted silicon-on-insulator (FD-SOI) devices under mechanical stress is demonstrated using impedance spectroscopy. This piezo-response…
When is a surface foam-phobic or foam-philic?
Miguel A. C. Teixeira, Steve Arscott, Simon J. Cox +1
By integrating the Young-Laplace equation, including the effects of gravity, we have calculated the equilibrium shape of the two-dimensional Plateau borders along which a vertical…
Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density
F. Cadiz, D. Lagarde, P. Renucci +5
Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At l…