137 citations · 411 across the 23 of their papers we have counts for
4 papers · 1 filter
Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density
F. Cadiz, D. Lagarde, P. Renucci +5
Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At l…
Absence of an intrinsic value for the surface recombination velocity in doped semiconductors
F. Cadiz, D. Paget, V. L. Berkovits +4
A self-consistent expression for the surface recombination velocity and the surface Fermi level unpinning energy as a function of light excitation power () is presented for…
Piezoresistance in silicon at uniaxial compressive stresses up to 3 GPa
J. S. Milne, I. Favorskiy, A. C. H. Rowe +2
The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 G…
Giant room temperature piezoresistance in a metal/silicon hybrid
A. C. H. Rowe, A. Donoso-Barrera, Ch. Renner +1
Metal/semiconductor hybrids are artificially created structures presenting novel properties not exhibited by either of the component materials alone. Here we present a giant piezor…