14 citations · 41 across the 11 of their papers we have counts for
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cond-mat.mes-hall2016★ 1 cited
Ab initio calculation of energy levels for phosphorus donors in silicon
J. S. Smith, A. Budi, M. C. Per +5
The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we c…
cond-mat.mtrl-sci2016★ 9 cited
Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide
Jamie M Booth, Daniel W. Drumm, Phil S. Casey +3
Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic m…