activity
20132026
most citedElectronic properties of delta-doped phosphorus layers in silicon and germanium

14 citations · 41 across the 11 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

5 papers · 1 filter

cond-mat.mes-hall2026

Antidot superlattices in two-dimensional topological insulators

Haolin Huang, Jackson S. Smith, Fabio Taddei +2

We investigate the electronic properties of a two-dimensional topological insulator patterned with an array of circular holes. The band structures of the topological insulator supe…

cond-mat.mes-hall2024

Transverse magnetic focusing in two-dimensional hole gases

Yik K. Lee, Jackson S. Smith, Hong Liu +4

Two-dimensional hole gases (2DHGs) have strong intrinsic spin-orbit coupling and could be used to build spin filters by utilising transverse magnetic focusing (TMF). However, with…

cond-mat.mes-hall2021★ 5 cited

Influence of device geometry and imperfections on the interpretation of transverse magnetic focusing experiments

Yik K. Lee, Jackson S. Smith, Jared H. Cole

Spatially separating electrons of different spins and efficiently generating spin currents are crucial steps towards building practical spintronics devices. Transverse magnetic foc…

cond-mat.mes-hall2016★ 1 cited

Ab initio calculation of energy levels for phosphorus donors in silicon

J. S. Smith, A. Budi, M. C. Per +5

The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we c…

cond-mat.mes-hall2013★ 14 cited

Electronic properties of delta-doped phosphorus layers in silicon and germanium

Jackson S. Smith, Jared H. Cole, Salvy P. Russo

The Thomas-Fermi-Dirac (TFD) approximation and an sp3d5s* tight binding method were used to calculate the electronic properties of a delta-doped phosphorus layer in silicon. This s…