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20172026
most citedReentrant behavior of the density vs temperature of indium islands on GaAs(111)A

6 citations · 18 across the 9 of their papers we have counts for

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Showing 2019 · physics.app-phShow all

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physics.app-ph2019

Strain engineering in Ge/GeSn core/shell nanowires

Simone Assali, Marco Albani, Roberto Bergamaschini +6

Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain…