346 citations · 878 across the 16 of their papers we have counts for
4 papers · 1 filter
Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs
Kwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu +14
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurr…
Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor
Xiwen Liu, Dixiong Wang, Jeffrey Zheng +5
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a…
Determination of Dielectric Functions and Exciton Oscillator Strength of Two-Dimensional Hybrid Perovskites
Baokun Song, Jin Hou, Haonan Wang +10
Two-dimensional (2D) hybrid organic inorganic perovskite (HOIP) semiconductors have attracted widespread attention as a platform of next generation optoelectronic devices benefitin…
Atomic-scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control
Wei-Hsiang Lin, Victor W. Brar, Deep Jariwala +5
Hexagonal boron nitride (h-BN) is a promising two-dimensional insulator with a large band gap and low density of charged impurities that is isostructural and isoelectronic with gra…