346 citations · 2.6k across the 86 of their papers we have counts for
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Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN
Zekun Hu, Haiwen Zhang, Rajeev Kumar Rai +12
Ferroelectric AlScN is promising for CMOS-compatible non-volatile memory, but thickness scaling is limited by leakage, premature breakdown, and defect-mediated failure. Here we sho…
Hydrazine-Free Precursor for Solution-Processed All-Inorganic Se and Se1-xTex Photovoltaics
Adam D. Alfieri, Swarnendu Das, Kim Kisslinger +5
Selenium (Se) has reemerged as a promising absorber material for indoor and tandem photovoltaics (PVs), and its alloys with Te (Se1-xTex) offer a widely tunable bandgap. Solution p…
Coercive Field Reduction in Ultra-thin Al1-XScXN via Interfacial Engineering with a Scandium Electrode
Yinuo Zhang, Rajeev Kumar Rai, Giovanni Esteves +4
Aluminum scandium nitride (AlScN) ferroelectrics are promising for next-generation non-volatile memory applications due to high remnant polarization compared with Pb(ZrxTi1-x)O3 an…
Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors through Boron Incorporation
Pedram Yousefian, Xiaolei Tong, Jonathan Tan +3
This paper presents high-temperature ferroelectric characterization of 40~nm AlBScN (AlBScN) thin film capacitors grown by co-sputtering AlB and…
Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN
Hyunmin Cho, Yubo Wang, Chloe Leblanc +5
Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising materials platform for nonvolatile memories, offering high polarization values…
Can a ferroelectric diode be a selector-less, universal, non-volatile memory?
Soumya Sarkar, Xiwen Liu, Deep Jariwala
Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes…
Observation of giant remnant polarization in ultrathin AlScN at cryogenic temperatures
Seunguk Song, Dhiren K. Pradhan, Zekun Hu +7
The discovery of wurtzite ferroelectrics opens new frontiers in polar materials, yet their behavior at cryogenic temperatures remains unexplored. Here, we reveal unprecedented ferr…
Indium selenides for next-generation low-power computing devices
Seunguk Song, Michael Altvater, Wonchan Lee +3
As silicon-based computing approaches fundamental physical limits in energy efficiency, speed, and density, the search for complementary materials to extend or replace CMOS technol…
Reconfigurable SWCNT ferroelectric field-effect transistor arrays
Dongjoon Rhee, Kwan-Ho Kim, Jeffrey Zheng +5
Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct c…
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C
Yunfei He, David C. Moore, Yubo Wang +9
Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, w…
Imprinting spin patterns by local strain control in a van der Waals antiferromagnet
Zhuoliang Ni, Huiqin Zhang, Qi Tian +6
Van der Waals magnets provide opportunities for exploring low-dimensional magnetism and spintronic phenomena. The Mermin-Wagner theorem states that long-range correlations in reduc…
Quantum Confined Luminescence in Two dimensions
Saiphaneendra Bachu, Fatimah Habis, Benjamin Huet +13
Achieving localized light emission from monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) embedded in the matrix of another TMD has been theoretically proposed…
Materials for High Temperature Digital Electronics
Dhiren K. Pradhan, David C. Moore, A. Matt Francis +5
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportatio…
Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes
Kwan-Ho Kim, Zirun Han, Yinuo Zhang +6
The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computi…
MoS/AlScN negative capacitance field-effect transistors
Seunguk Song, Kwan-Ho Kim, Srikrishna Chakravarthi +6
AlScN (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-bas…
Ultra-fast Vacancy Migration: A Novel Approach for Synthesizing Sub-10 nm Crystalline Transition Metal Dichalcogenide Nanocrystals
Pawan Kumar, Jiazheng Chen, Andrew C. Meng +9
Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), have the potential to revolutionize the field of electronics and photonics due to their unique physical…
Wafer-scale growth of two-dimensional, phase-pure InSe
Seunguk Song, Sungho Jeon, Mahfujur Rahaman +12
Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from I…
Above-room-temperature ferromagnetism in ultrathin van der Waals magnet
Hang Chen, Shahidul Asif, Kapildeb Dolui +16
Two-dimensional (2D) magnetic van der Waals materials provide a powerful platform for studying fundamental physics of low-dimensional magnetism, engineering novel magnetic phases,…
Cavity-Enhanced Raman Scattering from 2D Hybrid Perovskites
Aditya Singh, Jason Lynch, Surendra B. Anantharaman +6
Two-dimensional (2D) hybrid organic-inorganic perovskites (HOIPs) are promising candidates for optoelectronic applications due to their efficient light emission properties, and str…
Sub-ps thermionic electron injection effects on exciton-formation dynamics at a van der Waals semiconductor/metal interface
Kilian R. Keller, Ricardo Rojas-Aedo, Huiqin Zhang +5
Inorganic van der Waals bonded semiconductors like transition metal dichalcogenides are subject of intense research due to their electronic and optical properties which are promisi…
Scalable synthesis of 2D van der Waals superlattices
Michael J. Motala, Xiang Zhang, Pawan Kumar +23
Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating het…
Direct imaging of antiferromagnetic domains and anomalous layer-dependent mirror symmetry breaking in atomically thin MnPS
Zhuoliang Ni, Huiqin Zhang, David Hopper +8
We have developed a sensitive cryogenic second-harmonic generation microscopy to study a van der Waals antiferromagnet MnPS. We find that long-range Néel antiferromagnetic orde…
Light-Matter Coupling in Scalable Van der Waals Superlattices
Pawan Kumar, Jason Lynch, Baokun Song +19
Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in…
Exciton-Photonics: From Fundamental Science to Applications
Surendra B. Anantharaman, Kiyoung Jo, Deep Jariwala
Semiconductors in all dimensionalities ranging from 0D quantum dots and molecules to 3D bulk crystals support bound electron-hole pair quasiparticles termed as excitons. Over the p…