40 citations · 209 across the 17 of their papers we have counts for
9 papers · 1 filter
QUEST: A Quantized Energy-Aware SNN Training Framework for Multi-State Neuromorphic Devices
Sai Li, Linliang Chen, Yihao Zhang +6
Neuromorphic devices, leveraging novel physical phenomena, offer a promising path toward energy-efficient hardware beyond CMOS technology by emulating brain-inspired computation. H…
Threshold Current for Field-free Switching of the In-plane Magnetization in the Three-terminal Magnetic Tunnel Junction
Hongjie Ye, Zhaohao Wang
Three-terminal magnetic tunnel junction (MTJ), where non-volatile magnetization state can be switched via spin orbit torque (SOT), is attracting massive research interests since it…
Implementing Multiple Modes of the Perpendicular Magnetization Switching within a Single Spin Orbit Torque Device
Tongxi Liu, Zhaohao Wang, Min Wang +4
Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized…
Theoretical Conditions for Field-free Magnetization Switching Induced by Spin-orbit Torque and Dzyaloshinskii-Moriya Interaction
Min Wang, Zhaohao Wang, Xueying Zhang +1
Recently, it was demonstrated that field-free switching could be achieved by combining spin-orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI). However, this mechanism…
Field-free Deterministic Magnetization Switching Induced by Interlaced Spin-Orbit Torques
Min Wang, Zhaohao Wang, Chao Wang +1
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field…
Magnetization dynamics modulated by Dzyaloshinskii-Moriya interaction in the double-interface spin transfer torque magnetic tunnel junction
Simin Li, Zhaohao Wang, Yijie Wang +2
Currently double-interface MTJs have been developed for enhancing the thermal stability barrier in small technology node. Dzyaloshinskii-Moriya interaction (DMI) inevitably exists…
Field-free spin-orbit-torque switching of perpendicular magnetization aided by uniaxial shape anisotropy
Zhaohao Wang, Zuwei Li, Min Wang +3
It has been demonstrated that the switching of perpendicular magnetization can be achieved with spin orbit torque (SOT) at an ultrafast speed and low energy consumption. However, t…
Field-free switching of perpendicular magnetic tunnel junction by the interplay of spin orbit and spin transfer torques
Mengxing Wang, Wenlong Cai, Daoqian Zhu +11
Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. I…
Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory
Shouzhong Peng, Xiang Li, Wang Kang +7
Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-…