40 citations · 209 across the 17 of their papers we have counts for
17 papers
Reconfigurable Physical Unclonable Function based on SOT-MRAM Chips
Min Wang, Chuanpeng Jiang, Zhaohao Wang +5
Hardware-based security primitives have become critical to enhancing information security in the Internet of Things (IoT) era. Physical unclonable functions (PUFs) utilize the inhe…
Giant Orbital Torque-driven Picosecond Switching in Magnetic Tunnel Junctions
Yuxuan Yao, Chen Xiao, Xiaobai Ning +18
Orbital Hall effect was recently discovered as a novel pathway for driving magnetic moment. However, the integration of orbital Hall effect in magnetic memories suffers from low or…
QUEST: A Quantized Energy-Aware SNN Training Framework for Multi-State Neuromorphic Devices
Sai Li, Linliang Chen, Yihao Zhang +6
Neuromorphic devices, leveraging novel physical phenomena, offer a promising path toward energy-efficient hardware beyond CMOS technology by emulating brain-inspired computation. H…
Threshold Current for Field-free Switching of the In-plane Magnetization in the Three-terminal Magnetic Tunnel Junction
Hongjie Ye, Zhaohao Wang
Three-terminal magnetic tunnel junction (MTJ), where non-volatile magnetization state can be switched via spin orbit torque (SOT), is attracting massive research interests since it…
NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration
Yinglin Zhao, Jianlei Yang, Bing Li +7
The performance and efficiency of running large-scale datasets on traditional computing systems exhibit critical bottlenecks due to the existing "power wall" and "memory wall" prob…
Implementing Multiple Modes of the Perpendicular Magnetization Switching within a Single Spin Orbit Torque Device
Tongxi Liu, Zhaohao Wang, Min Wang +4
Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized…
Theoretical Conditions for Field-free Magnetization Switching Induced by Spin-orbit Torque and Dzyaloshinskii-Moriya Interaction
Min Wang, Zhaohao Wang, Xueying Zhang +1
Recently, it was demonstrated that field-free switching could be achieved by combining spin-orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI). However, this mechanism…
Field-free Deterministic Magnetization Switching Induced by Interlaced Spin-Orbit Torques
Min Wang, Zhaohao Wang, Chao Wang +1
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field…
Erase-hidden and Drivability-improved Magnetic Non-Volatile Flip-Flops with NAND-SPIN Devices
Ziyi Wang, Zhaohao Wang, Yansong Xu +2
Non-volatile flip-flops (NVFFs) using power gating techniques promise to overcome the soaring leakage power consumption issue with the scaling of CMOS technology. Magnetic tunnel j…
Magnetization dynamics modulated by Dzyaloshinskii-Moriya interaction in the double-interface spin transfer torque magnetic tunnel junction
Simin Li, Zhaohao Wang, Yijie Wang +2
Currently double-interface MTJs have been developed for enhancing the thermal stability barrier in small technology node. Dzyaloshinskii-Moriya interaction (DMI) inevitably exists…
Field-free spin-orbit-torque switching of perpendicular magnetization aided by uniaxial shape anisotropy
Zhaohao Wang, Zuwei Li, Min Wang +3
It has been demonstrated that the switching of perpendicular magnetization can be achieved with spin orbit torque (SOT) at an ultrafast speed and low energy consumption. However, t…
Field-free switching of perpendicular magnetic tunnel junction by the interplay of spin orbit and spin transfer torques
Mengxing Wang, Wenlong Cai, Daoqian Zhu +11
Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. I…
Optical control of magnetism in NiFe/VO2 heterostructures
Guodong Wei, Xiaoyang Lin, Zhizhong Si +9
Optical methods for magnetism manipulation have been considered as a promising strategy for ultralow-power and ultrahigh-speed spin switches, which becomes a hot spot in the field…
Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory
Shouzhong Peng, Xiang Li, Wang Kang +7
Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-…
Exploiting Spin-Orbit Torque Devices as Reconfigurable Logic for Circuit Obfuscation
Jianlei Yang, Xueyan Wang, Qiang Zhou +5
Circuit obfuscation is a frequently used approach to conceal logic functionalities in order to prevent reverse engineering attacks on fabricated chips. Efficient obfuscation implem…
Spintronics based Stochastic Computing for Efficient Bayesian Inference System
Xiaotao Jia, Jianlei Yang, Zhaohao Wang +4
Bayesian inference is an effective approach for solving statistical learning problems especially with uncertainty and incompleteness. However, inference efficiencies are physically…
Influence of heavy metal materials on magnetic properties of Pt/Co/heavy metal tri-layered structures
Boyu Zhang, Anni Cao, Junfeng Qiao +11
Pt/Co/heavy metal (HM) tri-layered structures with interfacial perpendicular magnetic anisotropy (PMA) are currently under intensive research for several emerging spintronic effect…