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20172022
most citedThermodynamic Studies of \b{eta}-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

99 citations · 140 across the 3 of their papers we have counts for

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physics.app-ph2022★ 41 cited

A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current

Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao +12

In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process.…