99 citations · 140 across the 3 of their papers we have counts for
3 papers
physics.app-ph2022★ 41 cited
A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current
Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao +12
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process.…
physics.app-ph2021
First Demonstration of Robust Tri-Gate \b{eta}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 °C
Hagyoul Bae, Tae Joon Park, Jinhyun Noh +4
Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time.…
physics.app-ph2017★ 99 cited
Thermodynamic Studies of \b{eta}-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate
Hong Zhou, Kerry Maize, Jinhyun Noh +2
The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliabilit…