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20172022
most citedThermodynamic Studies of \b{eta}-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

99 citations · 140 across the 3 of their papers we have counts for

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physics.app-ph2021

First Demonstration of Robust Tri-Gate \b{eta}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 °C

Hagyoul Bae, Tae Joon Park, Jinhyun Noh +4

Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time.…