21 citations · 117 across the 13 of their papers we have counts for
13 papers
NO2 adsorption on GaN surface and its interaction with the yellow-luminescence-associated surface state
Yury Turkulets, Nitzan Shauloff, Or Haim Chaulker +2
Trapping of charge at surface states is a longstanding problem in GaN that hinders a full realization of its potential as a semiconductor for microelectronics. At least part of thi…
Is the Mg-related GaN blue luminescence deep-level an MgO surface state?
Or Haim Chaulker, Yury Turkulets, Ilan Shalish
Mg is currently the only p-type dopant in technological use in GaN. Its incorporation into the GaN lattice is difficult. It requires a thermal treatment that only partially activat…
Homologous self-assembled superlattices: What causes their periodic polarity switching? Review, model, and experimental test
Varun Thakur, Dor Benafsha, Yury Turkulets +4
Quantum semiconductor structures are commonly achieved by bandgap engineering that relies on the ability to switch from one semiconductor to another during their growth. Growth of…
The GaN yellow-luminescence-related surface state and its interaction with air
Yury Turkulets, Nitzan Shauloff, Or Haim Chaulker +3
Yellow luminescence (YL) is probably the longest and most studied defect-related luminescence band in GaN, yet its electronic structure or chemical identity remain unclear. Most of…
Surface properties of semiconductors from post-illumination photovoltage transient
Yury Turkulets, Ilan Shalish
Free surfaces of semiconductors respond to light by varying their surface voltage (surface band bending). This surface photovoltage may be easily detected using a Kelvin probe. Mod…
Surface states in AlGaN/GaN high electron mobility transistors: Quantitative profiles and dynamics of the surface Fermi level
Yury Turkulets, Ilan Shalish
We present a method to obtain quantitative profiles of surface state charge density and monitor its dynamics under various stress conditions in high electron mobility transistor (H…
Mobility and sheet charge in high electron mobility transistor quantum wells from photon-induced transconductance
Yury Turkulets, Ilan Shalish
When a high electron mobility transistor is illuminated, the absorbed photons excite electron-hole pairs. The generated pairs are separated by the built in field in such a way that…
Polar charge induced self-assembly: An electric effect that causes non-isotropic nanorod growth in wurtzite semiconductors
Yury Turkulets, Ilan Shalish
Crystals grow by gathering and bonding of atoms to form an ordered structure. Typically, the growth is equally probable in all crystalline directions, but sometimes, it is not, as…
Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy?
Almog R. Azulay, Yury Turkulets, Davide Del Gaudio +2
Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when epitaxial templating from the substrate is clearly absent. Here, we reveal the phy…
Franz-Keldysh effect in semiconductor built-in fields
Yury Turkulets, Ilan Shalish
Franz-Keldysh effect is expressed in the smearing of the absorption edge in semiconductors under high electric fields. While Franz and Keldysh considered a limited case of external…
Contactless method to measure 2DEG charge density and band structure in high electron mobility transistor structures
Yury Turkulets, Ilan Shalish
We present a contactless method that is capable of characterizing a high electron mobility transistor heterostructure at the wafer stage, right after its growth, before any product…
Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures
Yury Turkulets, Ilan Shalish
Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization meth…
Surface effect that causes a peak in band-edge photocurrent spectra: a quantitative model
Yury Turkulets, Tamar Bick, Ilan Shalish
Band edge photocurrent spectra are typically observed in either of two shapes: a peak or a step. In this study, we show that the photocurrent band edge response of a GaN layer form…