21 citations · 117 across the 13 of their papers we have counts for
5 papers · 1 filter
Mobility and sheet charge in high electron mobility transistor quantum wells from photon-induced transconductance
Yury Turkulets, Ilan Shalish
When a high electron mobility transistor is illuminated, the absorbed photons excite electron-hole pairs. The generated pairs are separated by the built in field in such a way that…
Polar charge induced self-assembly: An electric effect that causes non-isotropic nanorod growth in wurtzite semiconductors
Yury Turkulets, Ilan Shalish
Crystals grow by gathering and bonding of atoms to form an ordered structure. Typically, the growth is equally probable in all crystalline directions, but sometimes, it is not, as…
Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy?
Almog R. Azulay, Yury Turkulets, Davide Del Gaudio +2
Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when epitaxial templating from the substrate is clearly absent. Here, we reveal the phy…
Franz-Keldysh effect in semiconductor built-in fields
Yury Turkulets, Ilan Shalish
Franz-Keldysh effect is expressed in the smearing of the absorption edge in semiconductors under high electric fields. While Franz and Keldysh considered a limited case of external…
Contactless method to measure 2DEG charge density and band structure in high electron mobility transistor structures
Yury Turkulets, Ilan Shalish
We present a contactless method that is capable of characterizing a high electron mobility transistor heterostructure at the wafer stage, right after its growth, before any product…