5 citations · 5 across the 2 of their papers we have counts for
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Surface properties of semiconductors from post-illumination photovoltage transient
Yury Turkulets, Ilan Shalish
Free surfaces of semiconductors respond to light by varying their surface voltage (surface band bending). This surface photovoltage may be easily detected using a Kelvin probe. Mod…
Surface states in AlGaN/GaN high electron mobility transistors: Quantitative profiles and dynamics of the surface Fermi level
Yury Turkulets, Ilan Shalish
We present a method to obtain quantitative profiles of surface state charge density and monitor its dynamics under various stress conditions in high electron mobility transistor (H…
Mobility and sheet charge in high electron mobility transistor quantum wells from photon-induced transconductance
Yury Turkulets, Ilan Shalish
When a high electron mobility transistor is illuminated, the absorbed photons excite electron-hole pairs. The generated pairs are separated by the built in field in such a way that…
Franz-Keldysh effect in semiconductor built-in fields
Yury Turkulets, Ilan Shalish
Franz-Keldysh effect is expressed in the smearing of the absorption edge in semiconductors under high electric fields. While Franz and Keldysh considered a limited case of external…
Contactless method to measure 2DEG charge density and band structure in high electron mobility transistor structures
Yury Turkulets, Ilan Shalish
We present a contactless method that is capable of characterizing a high electron mobility transistor heterostructure at the wafer stage, right after its growth, before any product…
Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures
Yury Turkulets, Ilan Shalish
Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization meth…