Intrinsic origin of electron scattering at 4H-SiC(0001)/SiO${}_2$

Shigeru Iwase, Christopher James Kirkham, Tomoya Ono

We introduce a first-principles study to clarify the carrier-scattering property at the SiC/SiO${}_2$. Interestingly, the electron transport at the conduction-band edge is significan…