C. Kirkham

activity

20152022

most citedIntrinsic origin of electron scattering at 4H-SiC(0001)/SiO

_{2}

13 citations · 34 across the 7 of their papers we have counts for

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cond-mat.mtrl-sci2015

Interplay between O defects and SiC stacking at the SiC/SiO $_{2}$ interface

Christopher James Kirkham, Tomoya Ono

We investigate the effect of SiC stacking on the 4H-SiC/SiO $_{2}$ interface, both in the presence and absence of O defects, which appear during thermal oxidation, via first principle…

Interplay between O defects and SiC stacking at the SiC/SiO2​ interface

Interplay between O defects and SiC stacking at the SiC/SiO $_{2}$ interface