activity
20152022
most citedIntrinsic origin of electron scattering at 4H-SiC(0001)/SiO

13 citations · 34 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2022★ 11 cited

Charging/discharging mechanism in Mg3Bi2 anode for Mg-ion batteries; The role of the spin-orbit coupling

M. Hussein N. Assadi, Christopher J. Kirkham, Ikutaro Hamada +1

Using density functional calculations, we examine insertion/extraction of Mg ions in Mg3Bi2, an interesting Mg-ion battery anode. We found that a (1 1 0) facet is the most stable t…

cond-mat.mes-hall2018★ 3 cited

Towards surface diffusion potential mapping on atomic length scale

Renan Villarreal, Christopher J. Kirkham, Alessandro Scarfato +2

The surface diffusion potential landscape plays an essential role in a number of physical and chemical processes such as self-assembly and catalysis. Diffusion energy barriers can…

cond-mat.mtrl-sci2017

Atomic layer doping of Mn magnetic impurities from surface chains at a Ge/Si hetero-interface

Koichi Murata, Christopher Kirkham, Satoshi Tsubomatsu +7

We realize Mn -doping into Si and Si/Ge interfaces using Mn atomic chains on Si(001). Highly sensitive X-ray absorption fine structure techniques reveal that encapsulation at ro…

cond-mat.mtrl-sci2017★ 4 cited

Electronic coupling between Bi nanolines and the Si(001) substrate: An experimental and theoretical study

M. Longobardi, C. J. Kirkham, R. Villarreal +3

Atomic nanolines are one dimensional systems realized by assembling many atoms on a substrate into long arrays. The electronic properties of the nanolines depend on those of the su…

cond-mat.mes-hall2017★ 3 cited

Sub-atomic electronic feature from dynamic motion of Si dimer defects in bismuth nanolines on Si(001)

C. J. Kirkham, M. Longobardi, S. A. Koster +2

Scanning tunneling microscopy (STM) reveals unusual sharp features in otherwise defect free bismuth nanolines self-assembled on Si(001). They appear as subatomic thin lines perpend…

cond-mat.mtrl-sci2016★ 13 cited

Intrinsic origin of electron scattering at 4H-SiC(0001)/SiO

Shigeru Iwase, Christopher James Kirkham, Tomoya Ono

We introduce a first-principles study to clarify the carrier-scattering property at the SiC/SiO. Interestingly, the electron transport at the conduction-band edge is significan…