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cond-mat.other2014
Comparison of the time-averaged power losses in the insulated-gate bipolar transistors and the hybrid SIT-MOS thyristors
A. S. Kyuregyan, A. V. Gorbatyuk, B. V. Ivanov
Two-dimensional numerical simulation of switching processes for equivalent silicon insulated gate bipolar transistors of CSTBT-type and hybrid SITh-MOS thyristors (HSMT) has been p…
cond-mat.other2014★ 5 cited
Picosecond switching of high voltage reverse-biased p+-n-n+-structures into conductive state by pulsed lighting
A. S. Kyuregyan
An analytical theory of high voltage reverse-biased p+-n-n+-structures picosecond switching into conducting state by pulsed lighting has been developed and a numerical simulation o…