Comparison of the time-averaged power losses in the insulated-gate bipolar transistors and the hybrid SIT-MOS thyristors

A. S. Kyuregyan, A. V. Gorbatyuk, B. V. Ivanov

Two-dimensional numerical simulation of switching processes for equivalent silicon insulated gate bipolar transistors of CSTBT-type and hybrid SITh-MOS thyristors (HSMT) has been p…