Picosecond switching of high voltage reverse-biased p+-n-n+-structures into conductive state by pulsed lighting

Abstract

An analytical theory of high voltage reverse-biased p+-n-n+-structures picosecond switching into conducting state by pulsed lighting has been developed and a numerical simulation of this process has been performed. Combining the results of theory and simulation allowed us to obtain a simple relation between the parameters of structure, light pulse, external circuit and main characteristics of the process - the load current pulse amplitude and duration of switching process.

12 pages, 8 figures, in Russian

Cited by in corpus (3)

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• Avalanche mode of high-voltage overvolting p+-i-n+-structures switching into conductive state by pulsed lighting
• Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p-n Junctions III. Self-heating effects