V. Darakchieva

activity

20132025

most citedAnisotropy, phonon modes, and free charge carrier parameters in monoclinic

β

-gallium oxide single crystals

216 citations · 675 across the 29 of their papers we have counts for

collaborators

Showing 2013Show all

3 papers · 1 filter

physics.optics2013★ 4 cited

Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by Infrared Spectroscopic Ellipsometry

S. Schöche, T. Hofmann, V. Darakchieva +6

Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular b…

physics.optics2013★ 36 cited

Electron effective mass in Al $_{0.72}$ Ga $_{0.28}$ N alloys determined by mid-infrared optical Hall effect

S. Schöche, P. Kühne, T. Hofmann +5

The effective electron mass parameter in Si-doped Al $_{0.72}$ Ga $_{0.28}$ N is determined to be $m^{*} = (0.336 \pm 0.020) m_{0}$ from mid-infrared optical Hall effect measurements. No s…

cond-mat.mes-hall2013★ 24 cited

Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect

P. Kühne, V. Darakchieva, J. D. Tedesco +8

We report on polarization selection rules of inter-Landau level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown…

Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by Infrared Spectroscopic Ellipsometry

Electron effective mass in Al0.72​Ga0.28​N alloys determined by mid-infrared optical Hall effect

Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect

Electron effective mass in Al $_{0.72}$ Ga $_{0.28}$ N alloys determined by mid-infrared optical Hall effect