Electron effective mass in unintentionally doped In${}_{0.33}$Ga${}_{0.67}$N determined by mid-infrared optical Hall effect

Nerijus Armakavicius, Vallery Stanishev, Sean Knight +3

Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure $c$-plane oriented In${}_{0.33}$…