31 citations · 175 across the 16 of their papers we have counts for
7 papers · 1 filter
Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology
Ghulam Hussain, Giuseppe Cuono, Piotr Dziawa +12
We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculatio…
Wurtzite (Ga,Mn)As nanowire shells with ferromagnetic properties
J. Sadowski, S. Kret, A. Siusys +5
(Ga,Mn)As in wurtzite crystal structure, is coherently grown by molecular beam epitaxy on the {1100} side facets of wurtizte (Ga,In)As nanowires and further encapsulated by (Ga,Al)…
Electric manipulation of the Mn-acceptor binding energy and the Mn-Mn exchange interaction on the GaAs (110) surface by nearby As vacancies
M. R. Mahani, A. H. MacDonald, C. M. Canali
We investigate theoretically the effect of nearby As (arsenic) vacancies on the magnetic properties of substitutional Mn (manganese) impurities on the GaAs (110) surface, using a m…
Interplay between Mn-acceptor state and Dirac surface states in Mn-doped BiSe topological insulator
M. R. Mahani, A. Pertsova, M. Fhokru Islam +1
We investigate the properties of a single substitutional Mn impurity and its associated acceptor state on the (111) surface of BiSe topological insulator. Combining ab init…
Trend of the magnetic anisotropy for individual Mn dopants near the (110) GaAs surface
M R Mahani, A Pertsova, C M Canali
Using a microscopic finite-cluster tight-binding model, we investigate the trend of the magnetic anisotropy energy as a function of the cluster size for an individual Mn impurity p…
Magnetic interactions of substitutional Mn pairs in GaAs
T. O. Strandberg, C. M. Canali, A. H. MacDonald
We employ a kinetic-exchange tight-binding model to calculate the magnetic interaction and anisotropy energies of a pair of substitutional Mn atoms in GaAs as a function of their s…
Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers
T. O. Strandberg, C. M. Canali, A. H. MacDonald
Motivated by recent STM experiments, we present a theoretical study of the electronic and magnetic properties of the Mn-induced acceptor level obtained by substituting a single Ga…