Interplay between Mn-acceptor state and Dirac surface states in Mn-doped BiSe topological insulator
arXiv:1406.4735 · doi:10.1103/PhysRevB.90.195441
Abstract
We investigate the properties of a single substitutional Mn impurity and its associated acceptor state on the (111) surface of BiSe topological insulator. Combining ab initio calculations with microscopic tight-binding modeling, we identify the effects of inversion-symmetry and time-reversal-symmetry breaking on the electronic states in the vicinity of the Dirac point. In agreement with experiments, we find evidence that the Mn ion is in the -valence state and introduces an acceptor in the bulk band gap. The Mn-acceptor has predominantly -character, and is localized mainly around the Mn impurity and its nearest-neighbor Se atoms. Its electronic structure and spin-polarization are determined by the hybridization between the Mn -levels and the -levels of surrounding Se atoms, which is strongly affected by electronic correlations at the Mn site. The opening of the gap at the Dirac point depends crucially on the quasi-resonant coupling and the strong real-space overlap between the spin-chiral surface states and the mid-gap spin-polarized Mn-acceptor states.
arXiv comment5 pages, 5 figures, journal
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- Spontaneous ferromagnetism and finite surface energy gap in the topological insulator BiSe from surface Bi$_\rm{Se}$ antisite defects
- Impurity-potential-induced gap at the Dirac point of topological insulators with in-plane magnetization
- Magnetic interactions of 4 electrons in the topological insulator chalcogenide BiSe