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researcher

J. Schwandt

125 papers hereh-index 00 citations0 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author4
  • middle author17
  • last author15

Across the 36 of 125 papers where every author was matched, so the position is known.

fields
  • hep-ex81
  • physics.ins-det38
  • cond-mat.mtrl-sci3
  • nucl-ex1
  • physics.app-ph1
  • physics.data-an1
same name
  • J. Schwandt — 398 papers
  • J. Schwandt — 10 papers, h 12
  • J. Schwandt — 8 papers, h 24
  • J. Schwandt — 1 paper
  • J. Schwandt — 1 paper

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20112026
most citedCombined measurements of Higgs boson couplings in proton-proton collisions at s​= 13 TeV

442 citations · 5.6k across the 120 of their papers we have counts for

collaborators
Showing 2013Show all

3 papers · 1 filter

physics.ins-det2013★ 11 cited

Study of X-ray radiation damage in the AGIPD sensor for the European XFEL

Jiaguo Zhang, Eckhart Fretwurst, Heinz Graafsma +3

The European X-ray Free Electron Laser (XFEL), currently being constructed in Hamburg and planning to be operational in 2017 for users, will deliver 27,000 fully coherent, high bri…

physics.ins-det2013★ 10 cited

Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors

Thomas Poehlsen, Eckhart Fretwurst, Robert Klanner +2

The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transien…

physics.ins-det2013★ 11 cited

Study of the accumulation layer and charge losses at the Si-SiO2 interface in p+n-silicon strip sensors

Thomas Poehlsen, Julian Becker, Eckhart Fretwurst +3

Using the multi-channel Transient Current Technique the currents induced by electron-hole pairs, produced by a focussed sub-nanosecond laser of 660 nm wavelength close to the Si-Si…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.