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Challenges for Silicon Pixel Sensors at the European XFEL
Robert Klanner, Julian Becker, Eckhart Fretwurst +4
A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition…
Design of the AGIPD Sensor for the European XFEL
J. Schwandt, E. Fretwurst, R. Klanner +1
For experiments at the European X-Ray Free-Electron Laser (XFEL) the Adaptive Gain Integrating Pixel Detector (AGIPD) is under development. The particular requirements for the dete…
Investigation of X-ray induced radiation damage at the Si-SiO2 interface of silicon sensors for the European XFEL
Jiaguo Zhang, Eckhart Fretwurst, Robert Klanner +3
Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of X-ray radiation dam…