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Optimization of the Radiation Hardness of Silicon Pixel Sensors for High X-ray Doses using TCAD Simulations
J. Schwandt, E. Fretwurst, R. Klanner +2
The European X-ray Free Electron Laser (XFEL) will deliver 27000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the reco…
Study of X-ray Radiation Damage in Silicon Sensors
Jiaguo Zhang, Eckhart Fretwurst, Robert Klanner +4
The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the rec…
Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon
Jiaguo Zhang, Ioana Pintilie, Eckhart Fretwurst +3
Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV pho…