301 citations · 724 across the 22 of their papers we have counts for
9 papers · 1 filter
Higher odd-order nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4
Xiubing Li, Zheng Dai, Shuai Zhang +10
The nonlinear Hall effect is a new member of the Hall effect family, which attracts intense research interests, and it is closely related to the quantum geometry of quantum materia…
Fano Interference in a Single-Molecule Junction
Yiping Ouyang, Rui Wang, Deping Guo +13
Trends of miniaturized devices and quantum interference electronics lead to the long desire of Fano interference in single-molecule junctions, here, which is successfully demonstra…
Experimental evidence on the dissipationless transport of chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices
Zhe Ying, Shuai Zhang, Bo Chen +6
We demonstrate the dissipationless transport of the chiral edge state (CES) in the nanodevices of quantum anomalous Hall insulator candidate MnBi2Te4. The device presents a near-ze…
Reversible Engineering of Topological Insulator Surface State Conductivity through Optical Excitation
Faji Xie, Zhen Lian, Shuai Zhang +13
Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphe…
A Gd@C82-based single molecular electret device with switchable electrical polarization
Kangkang Zhang, Cong Wang, Minhao Zhang +21
Single molecular electrets exhibiting single molecule electric polarization switching have been long desired as a platform for extremely small non-volatile storage devices, althoug…
Magneto-transport and Shubnikov-de Haas oscillations in the layered ternary telluride Ta3SiTe6 topological semimetal
Muhammad Naveed, Fucong Fei, Haijun Bu +10
Topological semimetals characterize a novel class of quantum materials hosting Dirac/Weyl fermions. The important features of topological fermions can be exhibited by quantum oscil…
Experimental observation of the gate-controlled reversal of the anomalous Hall effect in the intrinsic magnetic topological insulator MnBi2Te4 device
Shuai Zhang, Rui Wang, Xuepeng Wang +17
Here we report the reserved anomalous Hall effect (AHE) in the 5-septuple-layer van der Waals device of the intrinsic magnetic topological insulator MnBi2Te4. By employing the top/…
Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2
Qianqian Liu, Bo Chen, Boyuan Wei +7
Dirac and Weyl semimetals are new discovered topological nontrivial materials with the linear band dispersions around the Dirac/Weyl points. When applying non-orthogonal electric c…
Phase transition and anomalous scaling in the quantum Hall transport of topological insulator Sn-Bi1.1Sb0.9Te2S devices
Faji Xie, Shuai Zhang, Qianqian Liu +12
The scaling physics of quantum Hall transport in optimized topological insulators with a plateau precision of ~1/1000 e2/h is considered. Two exponential scaling regimes are observ…