activity
19992021
most citedSuperconductivity close to magnetic instability in Fe(Se1-xTex)0.82

641 citations · 1.9k across the 24 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

25 papers · 1 filter

cond-mat.mtrl-sci202136 cited

Direct evidence of ferromagnetism in MnSb2Te4

Wenbo Ge, Paul M. Sass, Jiaqiang Yan +3

We report the magnetic imaging of ferromagnetic domains in the van der Waals single crystal MnSb2Te4 from two different sources using cryogenic magnetic force microscopy. The magne…

cond-mat.mtrl-sci2020

Topological Magnetoelectric Switching on the Atomic Scale

Igor Altfeder, Robert C. Walko, Seng Huat Lee +1

Intrinsic magnetic topological insulators from MnBi2Te4 family promise realization of axion insulator, a theoretically predicted state of matter capable to mutually convert electri…

cond-mat.mtrl-sci2020

IrO2 Surface Complexions Identified Through Machine Learning and Surface Investigations

Jakob Timmermann, Florian Kraushofer, Nikolaus Resch +11

A Gaussian Approximation Potential (GAP) was trained using density-functional theory data to enable a global geometry optimization of low-index rutile IrO2 facets through simulated…

cond-mat.mtrl-sci2020

Indications for Lifshitz transitions in the nodal-line semimetal ZrSiTe induced by interlayer interaction

M. Krottenmüller, M. Vöst, N. Unglert +8

The layered material ZrSiTe is currently extensively investigated as a nodal-line semimetal with Dirac-like band crossings protected by nonsymmorphic symmetry close to the Fermi en…

cond-mat.mtrl-sci20192 cited

Subtle metastability of the layered magnetic topological insulator MnBi2Te4 from weak interactions

Jinliang Ning, Yanglin Zhu, Jamin Kidd +4

The metastable layered compound MnBi2Te4 is the first experimentally realized intrinsic antiferromagnetic topological insulator, predicted to host the quantum anomalous Hall effect…

cond-mat.mtrl-sci2019

Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3

Justin R. Rodriguez, William Murray, Kazunori Fujisawa +11

Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate…