Chemical pressure effect on the optical conductivity of the nodal-line semimetals ZrSi (=S, Se, Te) and ZrGe (=S, Te)
arXiv:1901.10256 · doi:10.1103/PhysRevB.99.125154
Abstract
ZrSiS is a nodal-line semimetal, whose electronic band structure contains a diamond-shaped line of Dirac nodes. We carried out a comparative study on the optical conductivity of ZrSiS and related compounds ZrSiSe, ZrSiTe, ZrGeS, and ZrGeTe by reflectivity measurements over a broad frequency range combined with density functional theory calculations. The optical conductivity exhibits a distinct U shape, ending at a sharp peak at around 10000~cm for all studied compounds, except for ZrSiTe. The U shape of the optical conductivity is due to transitions between the linearly dispersing bands crossing each other along the nodal line. The sharp high-energy peak is related to transitions between almost parallel bands, and its energy position depends on the interlayer bonding correlated with the / ratio, which can be tuned by either chemical or external pressure. For ZrSiTe, another pair of crossing bands appears in the vicinity of the Fermi level, corrugating the nodal-line electronic structure and leading to the observed difference in optical conductivity. The findings suggest that the Dirac physics in Zr compounds with =Si, Ge and =S, Se, Te is closely connected to the interlayer bonding.
9 pages, 6 figures
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- Strain Effects on Band Structure and Dirac Nodal-line Morphology of ZrSiSe
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