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From the 3 of 8 linked papers with an AI index.

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20242026
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cond-mat.mes-hall2026

Machine Learning for Charge State Characterization of Isolated Double Quantum Dots

Hyma Vallabhapurapu, Marco Candido, Krishna Choudhary +7

Scaling semiconductor quantum dot arrays toward fault-tolerant quantum computing requires efficient tuneup of spin qubits, a process that depends on the analysis of charge stabilit…

cond-mat.mes-hall2026

Dispersive Readout of a SiMOS Quantum Dot Using a Flip-Chip Integrated Microwave Resonator

Vo Kim Hieu Van, Santiago Serrano, Cédric Bohémier +12

The paper demonstrates a flip‑chip integration of a silicon MOS double quantum‑dot device with a superconducting microwave resonator, enabling dispersive readout of charge transiti…

cond-mat.mes-hall2026

SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography

Thomas Van Caekenberghe, Paul Steinacker, Bart Raes +31

The authors fabricate silicon MOS spin qubits using extreme‑ultraviolet (EUV) lithography on 300 mm wafers and demonstrate sub‑nanometer gate control, high uniformity, and gate fid…

cond-mat.mes-hall20261 cited

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices

Md. Mamunur Rahman, Ensar Vahapoglu, Kok Wai Chan +16

We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum…

cond-mat.mes-hall2024

A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations

Paul Steinacker, Nard Dumoulin Stuyck, Wee Han Lim +24

Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially via…